METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent an aluminum layer from being lifted by minimizing overshooting caused by a temperature during a deposition process of a titanium nitride layer by a CVD(chemical vapor deposition) process. CONSTITUTION: A metal interconnection is formed on a pre-metal dielectric formed on a semiconductor substrate. The metal interconnection is patterned and etched, and a heat treatment is performed. An insulation layer is formed on the metal interconnection and the pre-metal dielectric. A via hole is formed in the insulation layer. A barrier metal layer made of a plurality of metal layers is formed on the inner wall of the via hole and on the insulation layer by using a PVD(physical vapor deposition) process and a CVD process. A metal material is formed on the metal layer to fill the inside of the via hole. A CMP(chemical mechanical polishing) process is performed on the metal material and the barrier metal layer to form a metal material via until the insulation layer is exposed.