| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing a capacitance per unit area of a capacitor. SOLUTION: The semiconductor device is provide with a capacitor structure including a first electrode 125a, a second electrode 123a provided under the first electrode, a third electrode 121a provided under the second electrode, a first dielectric film 124 provided between the first and the second electrodes, and a second dielectric film 122 provided between the second and the third electrodes; an insulating film 128 for covering the capacitor structure and including a first hole extending to the first electrode, a second hole extending to the second electrode, and a third hole extending to the third electrode; a first conductive connection part 129a including part embedded in the first hole and part embedded in the third hole and electrically interconnecting the first and third electrodes; and a second conductive connection part 129b including part apart from the first conductive connection part and embedded in the second hole. COPYRIGHT: (C)2004,JPO |
