| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface modification method whereby a high-quality silicon oxynitride film with decreased damage is formed in a short treatment time by sufficiently decreasing the nitrogen concentration at the interface between a silicon oxide film and a silicon substrate and increasing the nitrogen concentration in the silicon oxide film. SOLUTION: The method for modifying, with a plasma, the surface of a substrate to be treated comprises adjusting the temperature of the substrate to 200°C or higher but lower than 400°C, introducing a gas containing nitrogen atoms or a mixture of a gas containing nitrogen atoms with a rare gas into a plasma treatment chamber, adjusting the pressure in the plasma treatment chamber to 13.3 Pa or higher, generating a plasma in the plasma treatment chamber, and injecting ions present in the plasma at 10 eV or lower to the substrate. COPYRIGHT: (C)2004,JPO |
