| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated circuit with a capacitor which can prevent the oxidation of bottom electrodes and plugs and has desired characteristics. <P>SOLUTION: Holes are formed in a BPSG film (22, 122), and then the holes are filled with polysilicon (24) to form the bottom electrodes. Then, a nitride film (32) is formed on the bottom electrodes and the BPSG film. When the nitride film is used to prevent the oxidation of contact plugs (20) and gate electrodes (15) in a healing process in a wet atmosphere to be conducted afterwards, nitrogen ions are implanted into a front surface of the BPSG film prior to forming the nitride film, or the B (boron) concentration in a surface portion of the BPSG film is lowered. <P>COPYRIGHT: (C)2004,JPO |
