SINGLE CRYSTAL GALLIUM NITRIDE LOCALIZED SUBSTRATE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a single crystal gallium nitride localized substrate suitable for manufacturing an electronic-optical integrated device in which an electronic device and an optical device are mounted together on the same silicon substrate. SOLUTION: A silicon carbide 200 is formed on a silicon sunbstrate 100 and a single crystal gallium nitride 410 is locally formed on the silicon carbide 200, thereby providing a region where the single crystal gallium nitride 410 is locally grown on the silicon substrate 100. A silicon nitride 220 is used as a mask when the single crystal gallium nitride 410 is formed. COPYRIGHT: (C)2004,JPO