发明名称 |
Method of fabricating MOS transistors |
摘要 |
A method of fabricating a MOS transistor is provided. According to the method, a rapid thermal anneal is applied to a semiconductor substrate having active regions doped with well impurity ions and channel impurity ions. Thus, during implantation of the well and the channel impurity ions, crystalline defects resulting from the implantation can be cured by the rapid thermal anneal.
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申请公布号 |
US6753227(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20030437881 |
申请日期 |
2003.05.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO CHANG-HYUN;KOH GWAN-HYEOB;KIM KI-NAM |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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