| 发明名称 |
Method for planarizing an isolating layer |
| 摘要 |
A method for planarizing the surface of an isolating layer that is deposited on a semiconductor body is described. Zones where the isolating layer has a low level are covered with a block mask in order to be able to selectively etch zones of the isolating layer with a higher level.
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| 申请公布号 |
US6753236(B2) |
申请公布日期 |
2004.06.22 |
| 申请号 |
US20020233686 |
申请日期 |
2002.09.03 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FELDNER KLAUS;GRAF WERNER;KIESLICH ALBRECHT;SACHSE HERMANN |
| 分类号 |
H01L21/3105;H01L21/762;H01L21/8242;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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