| 摘要 |
A semi-conductor such as germanium is wetted by applying an oxide of a metal or semi-conductor in powder form and heating in a reducing atmosphere to reduce the oxide. The semi-conductor may be joined to a metal body by placing the powdered oxide between the semi-conductor and the metal body and heating in a reducing atmosphere. The oxides may be those of germanium, lead, indium, bismuth, nickel or cadmium. A nickel plate is joined to a germanium body by means of powdered germanium dioxide placed between the parts, the assembly being heated to 750 DEG C. in a mixture of inert gas and hydrogen. A germanium crystal may also be heated with germanium and lead by heating powdered germanium dioxide and lead at 750 DEG C. in a mixture of inert gas and hydrogen. |
