| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which disperses current and surge to the whole chip without concentrating them into the vicinity of an emitter pad even by simple layout constitution and realizes high surge destruction pressure resistance. SOLUTION: A plurality of multi-emitter areas 6 are formed in a base area 2 close to the emitter pad 5, and distances between base contacts 10 formed in the base area 2 and the multi-emitters 6 are gradually shortened in accordance with separation from the emitter pad 5. A plurality of multi-base areas 9 are uniformly formed in an emitter area 3 close to a base pad 4. COPYRIGHT: (C)2004,JPO
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