| 摘要 |
PURPOSE: A method of manufacturing a contact of a semiconductor device is provided to prevent the short between a gate and the contact due to misalignment by restraining the damage of a first planarization layer due to etching using a first nitride layer. CONSTITUTION: A first insulating layer(4), a first planarization layer(5), and a first nitride layer(20) are sequentially formed on a substrate(1) with a plurality of gates(2). A first contact hole for exposing the substrate to the outside is formed by etching selectively the resultant structure. A first contact(6) is completed by filling the first contact hole with a first polysilicon layer. A second insulating layer(7), a second nitride layer(8), a second planarization layer(9), a third insulating layer(10), and a fourth insulating layer(11) are sequentially formed thereon. The third insulating layer is exposed by etching selectively the fourth insulating layer. A spacer(12) is formed at sidewalls of the fourth insulating pattern. A second contact hole for exposing the first contact is formed in the resultant structure.
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