| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve topology, prevent a dishing phenomenon, and restrain the generation of particles by depositing a polysilicon layer two times. CONSTITUTION: An isolation layer(13) is formed in a semiconductor substrate(11). The first polysilicon layer(15) is formed on the entire surface of the resultant structure. A resist layer(17) is formed on the first polysilicon layer. The second polysilicon layer(19) is formed on the resist layer. A CMP(Chemical Mechanical Polishing) process is carried out on the second polysilicon layer, the resist layer, and the first polysilicon layer for the planarization of the resultant structure. Preferably, the thicknesses of the first and second polysilicon layer are about 1000 and 700 angstrom, respectively.
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