| 摘要 |
PURPOSE: A growing structure of an LED is provided to maintain uniformly density of electrons and density of holes within an active layer by forming the active layer within a depletion region. CONSTITUTION: A growing structure of an LED includes a substrate, an n-type semiconductor layer, a p-type active layer, and a p-type semiconductor layer. The n-type semiconductor layer(12) is formed on an upper surface of the substrate(11) in order to receive electrons according to the forward voltage. The p-type active layer(14) is grown on an upper surface of the n-type semiconductor layer. The p-type semiconductor layer(15) is formed on an upper surface of the p-type active layer. An n-type active layer(13) is formed between the p-type active layer and the n-type semiconductor layer. |
