| 发明名称 |
Thermal activation of gas for use in a semiconductor process chamber |
| 摘要 |
A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities. <IMAGE>
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| 申请公布号 |
EP1428907(A1) |
申请公布日期 |
2004.06.16 |
| 申请号 |
EP20030256469 |
申请日期 |
2003.10.14 |
| 申请人 |
THE BOC GROUP, INC. |
发明人 |
LEESON, NOEL JAMES;HODGSON, GRAHAM;BUCKLEY, PETER HAROLD;HOGLE, RICHARD ALLEN |
| 分类号 |
H01L21/304;B08B7/00;C23C16/44;H01L21/00;H01L21/205;(IPC1-7):C23C16/44;H01L21/306 |
主分类号 |
H01L21/304 |
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