| 摘要 |
A semiconductor manufacturing method that includes defining a substrate, depositing a polysilicon layer over the substrate, depositing a layer of photoresist over the polysilicon layer, patterning and defining the photoresist layer, depositing a layer of inorganic material over the patterned and defined photoresist layer, wherein the layer of inorganic material is conformal and photo-insensitive, and anisotropic etching the layer of inorganic material and the layer of semiconductor material.
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