发明名称 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM, METHOD FOR PRODUCING THE SAME, INTERLAYER INSULATING FILM AND SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a composition for forming a porous film, from which a porous film having practical dynamic strength is formed by a simple process at a low cost is formed and the porous film and to provide a method for producing the same and a low-cost and high-performance semiconductor apparatus which has a built-in porous film and high reliability. SOLUTION: The composition for forming the porous film comprises a polymer obtained by hydrolytic condensation of one or more of silane compounds represented by general formula (1), preferably a polymer obtained by hydrolytic cocondensation of one or more of the silane compounds represented by general formula (1) and one or more of silane compounds represented by general formula (2). The method for producing the porous film comprises a process for coating the composition for forming the film and a process for forming porosity. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004161876(A) 申请公布日期 2004.06.10
申请号 JP20020329126 申请日期 2002.11.13
申请人 SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD 发明人 IWABUCHI MOTOAKI;YAGIHASHI FUJIO;HAMADA YOSHITAKA;NAKAGAWA HIDEO;SASAGO MASARU
分类号 C08L83/04;C08G77/04;C08G77/38;C08K5/23;C09D183/04;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C08G77/38 主分类号 C08L83/04
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