发明名称 |
METHOD OF PRODUCING A LATERALLY DOPED CHANNEL |
摘要 |
<p>A lateral doped channel, particularly in a MOSFET of a semiconductor memory cell. A first doping material (210) is implanted substantially vertically into a region (220) adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material (240) is implanted substantially vertically into the region (220) adjacent to a gate structure. The second implantation forms source/drain regions (250) and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length. The memory cell may be a floating gate type or a nitride type (SONOS) non-volatile memory.</p> |
申请公布号 |
WO2004049446(A1) |
申请公布日期 |
2004.06.10 |
申请号 |
WO2003US21667 |
申请日期 |
2003.07.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WONG, NGA-CHING;THURGATE, TIMOTHY;HADDAD, SAMEER, S. |
分类号 |
H01L21/265;H01L21/336;H01L21/8239;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/10;(IPC1-7):H01L27/115;H01L21/824 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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