| 摘要 |
A semiconductor integrated circuit including an LDMOS device structure comprises a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region.
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