| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to be capable of preventing the generation of arcing defect as an anti-reflective coating and a hard mask are etched. CONSTITUTION: A conductive layer(11) for a bit line, a hard mask(13), and an anti-reflective coating(15) are sequentially deposited on a semiconductor substrate(1). A photoresist pattern(17) is formed on the anti-reflective coating. The anti-reflective coating and the hard mask are firstly etched by an ICP type etcher using the photoresist pattern as a mask. The conductive layer is secondly etched by using the etched hard mask as a mask. The first etching process is carried out by applying source power of 13.56 MHz and gate pulse of 10 kHz using mixed plasma of CF4, CHF3, O2, and Ar.
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