发明名称 |
DIELECTRIC FILM WITH IMPROVED QUALITY AND FORMING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A dielectric film and a forming method thereof, and a semiconductor device using the dielectric film and a manufacturing method thereof are provided to improve the quality of the dielectric film by using oxygen atoms or nitrogen atoms of high density. CONSTITUTION: A dielectric film is formed directly or indirectly on a minimal portion of a glass substrate or a plastic substrate by using a plasma generator(10). The dielectric film contains oxide silicon at a desired portion in a thickness direction. The oxide silicon has a composition rate of (1:1.94) to (1:2) between silicon and oxygen.
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申请公布号 |
KR20040048808(A) |
申请公布日期 |
2004.06.10 |
申请号 |
KR20030066819 |
申请日期 |
2003.09.26 |
申请人 |
KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAIHATSU CENTER |
发明人 |
GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA |
分类号 |
H01L21/31;H01L21/316;H01L21/318;H01L21/336;H01L29/786;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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