| 摘要 |
PROBLEM TO BE SOLVED: To provide a multipurpose substrate processing system in which various processes required for fabricating a semiconductor device using polysilicon can be carried out continuously in one system. SOLUTION: In the process for fabricating a thin film integrated circuit using a multichamber having first, second and third pressure reducible processing chambers where the second and third processing chambers are coupled through a pressure reducible common chamber provided with a means for conveying a glass substrate to each processing chamber, a silicon nitride film 200 is formed on the glass substrate 201 in the first processing chamber, a silicon oxide film 203 is formed the silicon nitride film in the second processing chamber, and an amorphous silicon film is formed on the silicon oxide film in the third processing chamber. Consequently, the silicon nitride film, the silicon oxide film and the amorphous silicon film can be formed continuously without opening to the atmosphere. COPYRIGHT: (C)2004,JPO |
