| 摘要 |
PROBLEM TO BE SOLVED: To carry out highly reliable recording and reading at a high speed even in a magnetic memory in which elements are highly densely formed. SOLUTION: The magnetic memory is provided with a magnetic storage element in which one electrode is connected to a first address line and the other electrode is connected to a gate, a MOS transistor in which the drain and source are connected to the first and second address lines, and a capacitor in which the gate of the transistor is connected to the address line. For recording, a current is supplied to the address line connected to the transistor while a potential difference between the gate and the source or the drain of the transistor connected to the storage element is maintained at an operation threshold voltage or lower. For reading, a voltage is applied between the address lines connected to the transistor to make determination so as to make the potential difference between the gate and the source or the drain of the transistor connected to the storage element larger than the operation threshold voltage. COPYRIGHT: (C)2004,JPO
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