发明名称 |
ATOMIC LAYER DEPOSITION OF HIGH K DIELECTRIC FILMS |
摘要 |
A method of processing a semiconductor substrate includes reacting in a reactor a first reactant gas, evacuating the first reactant gas from the reactor, reacting a second reactant gas, and evacuating the second reactant gas. The reacting of the first reactant gas reacts the first reactant gas with an exposed surface of the semiconductor substrate in a reactor to convert the exposed surface into a solid mono-layer. The reacting of the second reactant gas reacts the second reactant gas with the solid mono-layer in the reactor to convert the solid mono-layer into a gaseous compound. The evacuating of the second reactant gas also evacuates the gaseous compound from the reactor. |
申请公布号 |
WO2004008827(A3) |
申请公布日期 |
2004.06.03 |
申请号 |
WO2003US22712 |
申请日期 |
2003.07.21 |
申请人 |
AVIZA TECHNOLOGY, INC.;LEE, SANG-IN;SENZAKI, YOSHIHIDE |
发明人 |
LEE, SANG-IN;SENZAKI, YOSHIHIDE |
分类号 |
C23C16/02;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316 |
主分类号 |
C23C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|