| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which oscillates in a fundamental lateral mode, up to a high output. SOLUTION: A nitride semiconductor laser device (10) has a horizontal light-confining ridge stripe structure (13) which is substantially perpendicular to two resonator planes (11, 12) facing each other. The ridge stripe structure (13) is provided with one or more regions, which are narrower or wider in a width (W2) by 0.1μm or larger than a width (W1) in the vicinity of the resonator plane on the front surface side. A kink in the I-L characteristics is suppressed, and the nitride semiconductor laser device which oscillates in the fundamental lateral mode up to the high output can be obtained in a proper production yield. COPYRIGHT: (C)2004,JPO
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