| 摘要 |
PROBLEM TO BE SOLVED: To improve a withstand voltage of a semiconductor device while restraining an increase in chip area. SOLUTION: A semiconductor chip has a main element 26, a control element 28 and withstand voltage retention regions (a main isolation region 46, a control isolation region 48 and a guard ring 50). Impurity doping regions 52, 56 and 54 of the same conductivity types as the withstand voltage retention regions 46, 48 and 50 are formed only in a region outside plane view-shaped corners of the withstand voltage retention regions 46, 48 and 50 of outer peripheral regions of the withstand voltage retention regions 46, 48 and 50. According to this constitution, field concentrations to the corners part of the withstand voltage retention regions 46, 48 and 50 can be relaxed, thus improving a withstand voltage. Furthermore, since the impurity doping regions 52, 56 and 54 are formed only in a region outside the corners of the withstand voltage retention regions 46, 48 and 50, it is possible to suppress an increase in chip area. COPYRIGHT: (C)2004,JPO |
