| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device having excellent light-emitting performance and being cut in desired form and size with superior yield. <P>SOLUTION: In the light emitting device in which N-type and P-type gallium nitride based compound semiconductor layers lattice-mismatched to a substrate are laminated successively on the substrate, the surfaces of the N-type gallium nitride based compound semiconductor layer are formed on both sides of the P-type gallium nitride based compound semiconductor layer by etching parts of the P-type gallium nitride compound semiconductor layer, while the separation sections of the substrate are exposed from the N-type gallium nitride based compound semiconductor layer. <P>COPYRIGHT: (C)2004,JPO |
