发明名称 |
Method for fabricating semiconductor device |
摘要 |
A silicon oxide film is formed on a semiconductor substrate made of silicon. Subsequently, a resist film containing carbon is formed on the silicon oxide film, and thereafter the formed resist film is patterned, thereby forming a resist pattern. Subsequently, the resist pattern is exposed to a sulfur dioxide gas, and then dry etching is performed on the silicon oxide film by using the resist pattern exposed to the sulfur dioxide gas as a mask.
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申请公布号 |
US2004106257(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030720197 |
申请日期 |
2003.11.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OKAMURA HIDEAKI;YAMAGUCHI TAKAO;SASAKI TOMOYUKI |
分类号 |
H01L21/027;H01L21/311;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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