| 摘要 |
In a chemical vapor deposition apparatus including a susceptor support base (1) and a susceptor (2), and configured to rotate the susceptor (2) with a rotary shaft (5), a gap as wide as 1 mm or more is provided along the boundary between the support base (1) and the perimeter of the susceptor (2) to prevent Ga from forming bridges between the support base (1) and the susceptor (2) during growth of III-V compound semiconductors such as GaN, thereby preventing disturbance of rotation. <IMAGE> |
