发明名称 |
ARC CHAMBER WITH PLURALITY OF BODY IN SOURCE HEAD OF ION IMPLANTING APPARATUS |
摘要 |
PURPOSE: An arc chamber with a plurality of body in a source head of an ion implanting apparatus is provided to be capable of replacing a damaged part alone with new one as the arc chamber is damage. CONSTITUTION: An arc chamber(200) with a plurality of body is provided with an arc chamber substrate(170) for contacting an ion gas line of a source head through an ion gas inflow part(178), a substrate protecting part(160) inserted into the arc chamber substrate, and a fence. At this time, the fence includes a repeller guider(130) and a cathode guider(120) connected with the arc chamber substrate and spaced apart from an ion gas inlet port(180), and a pair of ion gas guiders connected with the lateral portions of the repeller and cathode guider in parallel. The arc chamber further includes an end plate(100) connected with the upper portion of the fence.
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申请公布号 |
KR20040045187(A) |
申请公布日期 |
2004.06.01 |
申请号 |
KR20020073231 |
申请日期 |
2002.11.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA, DO SEON;LEE, DONG JIN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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