| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to lessen thermal stress, prevent the generation of porosities, and enhance surface adhesive force by forming a predetermined layer between a metal barrier and a metal layer. CONSTITUTION: A dual damascene pattern having a via hole and a trench is formed on a semiconductor structure(10) for exposing a lower metal line(14). A barrier metal(30) is formed along the upper surface of the resultant structure. A buffer layer(32) is deposited on the entire surface of the barrier metal. A seed layer is deposited on the buffer layer. An upper metal line(34) is formed by filling the via hole and the trench with predetermined metal by an electroplating process. Heat treatment and planarization are sequentially carried out on the resultant structure.
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