PLANARIZING GATE MATERIAL TO IMPROVE GATE CRITICAL DIMENSION IN SEMICONDUCTOR DEVICES

摘要

A method of manufacturing a semiconductor device (100) may include forming a fin structure (210) on an insulator (120). The fin structure (210) may include side surfaces and a top surface. The method may also include depositing a gate material (320) over the fin structure (210) and planarizing the deposited gate material (320). An antireflective coating (520) may be deposited on the planarized gate material (320), and a gate structure (510) may be formed out of the planarized gate material (320) using the antireflective coating (520).