| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a dummy structure is provided even in a fuse circuit and which can avoid the lowering of the cutting margin and damages to a substrate while maintaining flatness and line width controllability. SOLUTION: This semiconductor device comprises a semiconductor substrate having a main surface, the fuse circuit formed above the main surface and containing a fuse element having a prescribed cutting point, and a first shallow trench isolation area formed on the surface of the semiconductor device below the fuse circuit. This device also comprises a plurality of active area dummies formed through the first shallow trench isolation area except a prescribed area around the cutting point. COPYRIGHT: (C)2004,JPO |
