发明名称 METHOD AND DEVICE FOR POLISHING PLASMA CHAMBER CATHODE HOLES
摘要 The present invention relates to the plasma chamber cathode that has minute holes (21) of less than 0.5mm in diameter and made of a silicon plate of a certain thickness. The present invention is designed to provide the cathode which can flow the gas into the plasma chamber in a stable way by polishing the surface of the cathode in the chamber which is used to process the semiconductor wafer. The cathode is fixed with jigs which are made of abrasion-proof metal and has the same hole disposition as the said cathode (20). The jetter (30) has easy-to-open upper cover and has many jet nozzles (31) arrayed inward at regular intervals. The said jetter (30) is installed on the upper part of the main body (40) with a certain space and the jet nozzles (31) of each jetter(30) are interlocked with the compressor (50) and the pump (60). The polishing solution tank (70) under each jetter (30) is linked to the said pump (60). The said cathode (20) is fixed on the jetter (30) that has jet nozzles on it. The polishing solution is injected with air at a certain pressure through the said jet nozzles (31). Then the solution goes through the cathode holes, guided by jig (a) holes on both sides, and polishes the surface.
申请公布号 WO2004044971(A1) 申请公布日期 2004.05.27
申请号 WO2002KR02093 申请日期 2002.11.09
申请人 WORLDEX INT;CHUNG, JAE-KEUK 发明人 CHUNG, JAE-KEUK
分类号 B08B9/02;H01J37/32;H01L21/00 主分类号 B08B9/02
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