发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory permitting to perform an efficient burn-in test in a logic-consolidated device or the like. SOLUTION: The semiconductor memory is provided with an isolation part for isolating a bit line BL in a 1st area including a memory cell formed of a thick film transistor and a 2nd area including a sense amplifier formed of a thin film transistor. Moreover, voltage supply lines are provided corresponding to the respective areas. In a test mode, the isolation unit isolates the two areas, and a test voltage is supplied from the voltage supply line. Thus, a test voltage corresponding to a thick film transistor and a thin film transistor can be supplied to allow an efficient burn-in test to be performed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004152399(A) 申请公布日期 2004.05.27
申请号 JP20020316204 申请日期 2002.10.30
申请人 RENESAS TECHNOLOGY CORP 发明人 MORISHITA GEN;KINOSHITA MITSUYA
分类号 G01R31/30;G01R31/28;G11C29/06;G11C29/12;H01L21/822;H01L27/04;H01L27/10;(IPC1-7):G11C29/00 主分类号 G01R31/30
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