| 摘要 |
A method and apparatus (500) for simulating a magnetoresistive random access memory (MRAM) (102) uses non-linear functions to model both non-linear magnetic tunnel junction (MTJ) effects and non-linear state switching effects. The method includes calculating a high threshold (THI) and a low threshold (TLO) based on a function of the hard axis current (IH). The easy axis current (IE) is compared to the high threshold (THI). If the easy axis current is greater than the high threshold, the MTJ resistance (RHI) is set to represent a stored high value. The easy axis current is compared to the low threshold. If the easy axis current is less than the low threshold, the MTJ resistance (RLO) is set to represent a stored low value. By using non-linear functions to model the MTJ effects and switching effects, the behavior of an MRAM (102) can be more accurately simulated.
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