DAMASCENE EXTREME ULTRAVIOLET LITHOGRAPHY ALTERNATIVE PHASE SHIFT PHOTOMASK AND METHOD OF MAKING

摘要

A photolithography mask is disclosed. The mask comprises a pattern layer that is selectively formed on a substrate in a photomask pattern. Next, a multilayer stack is formed on the pattern layer and the substrate. The multilayer stack is comprised of a plurality of pairs of thin films. Finally, an absorptive layer is disposed in trenches formed within the multilayer stack. The absorptive layer is absorptive of an EUV illuminating radiation. Further, the trenches are located substantially over the borders between the pattern layer and the substrate.