发明名称 |
A method of forming dual work function gate electrodes using a doped polysilicon and a metal silicon germanium compound |
摘要 |
A dielectric layer (50) is formed over a semiconductor (10) that contains a first region (20) and a second region (30). A polysilicon layer is formed over the dielectric layer (50) and over the first region (20) and the second region (30). The polysilicon layer can comprise 0 to 50 atomic percent of germanium. A metal layer is formed over the polysilicon layer and one of the regions and reacted with the underlying polysilicon layer to form a metal silicide or a metal germano silicide. The polysilicon and metal silicide or germano silicide regions are etched to form transistor gate regions (60) and (90) respectively. If desired a cladding layer (100) can be formed above the metal gate structures. <IMAGE>
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申请公布号 |
EP1422755(A2) |
申请公布日期 |
2004.05.26 |
申请号 |
EP20030104320 |
申请日期 |
2003.11.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO, ANTONIO L. P.;VISOKAY, MARK R.;COLOMBO, LUIGI |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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地址 |
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