| 摘要 |
The invention provides a semiconductor memory device having a trench part serving as an isolation area formed on semiconductor substrate, control gate used for controlling write-operation and read-operation formed orthogonally to the trench part, a source line of a first diffused layer formed on the surface of the trench part along one of the longitudinal sides of the control gate, and on the semiconductor substrate between the neighboring trench parts, silicide layer formed over the surface of the source line, and a drain of a second diffused layer formed between the trench parts in the other of the longitudinal sides.
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