MRAM with asymmetric cladded conductor

摘要

An asymmetric cladded conductor structure for a magnetic field sensitive memory cell is disclosed. One or both of the conductors that cross the memory cell can include an asymmetric cladding that covers a top surface and only a portion of the opposed side surfaces of the conductors such that the cladding on the opposed side surfaces is recessed along those opposed side surfaces in a direction away from a data layer of the memory cell. The cladding is recessed by an offset distance. The asymmetric cladding increases a reluctance of a closed magnetic path with a resulting decrease in magnetic coupling with the data layer. An aspect ratio of the memory cell can be reduced thereby increasing areal density.