| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to prevent the contact resistance value of an upper electrode and a contact hole filling material by reducing variation of contact resistance caused by a difference of an etch depth of the contact hole and by embodying a stable characteristic. CONSTITUTION: The first insulation layer(110) is formed on a semiconductor substrate(100). A conductive layer interconnection is formed on the first insulation layer. The second insulation layer(140) is formed on the first insulation layer including the conductive layer interconnection. A polysilicon layer for an upper electrode(150b) and a material layer(160b) of a low etch rate are sequentially formed on the second insulation layer. Only the material layer of the low etch rate and the polysilicon layer on the conductive layer interconnection and the semiconductor substrate are etched. The third insulation layer(180) is formed on the resultant structure. Contact holes(200,300,400) for an upper electrode contact, the conductive layer interconnection contact and a semiconductor substrate contact are formed inside the insulation layer.
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