发明名称 |
VARIABLE CAPACITOR AND ITS MANUFACTURING METHOD |
摘要 |
A variable capacitor having a semiconductor layer formed over a substrate with a buried oxide film interposed therebetween. In the semiconductor layer, an n-region (132) containing an n-type dopant and formed in a ring shape, an anode (133) formed in a ring shape, joined to the periphery of the n-region (132), and containing a p-type dopant, and a cathode (131) joined to the inner periphery of the n-region (132) and containing a n-type dopant are formed. The dopant concentration of the n-region (132) is lower than those of the anode (133) and cathode (131).
|
申请公布号 |
WO03054972(A8) |
申请公布日期 |
2004.05.21 |
申请号 |
WO2002JP12949 |
申请日期 |
2002.12.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;ASAI, AKIRA;OHNISHI, TERUHITO |
发明人 |
ASAI, AKIRA;OHNISHI, TERUHITO |
分类号 |
H01L21/329;H01L21/84;H01L27/12;H01L29/93;(IPC1-7):H01L29/93;H01L27/06;H01L29/786 |
主分类号 |
H01L21/329 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|