发明名称 |
METHOD AND APPARATUS FOR DETECTING ENDPOINT |
摘要 |
<p>The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the filtering comprises applying a Savitsky Golay filter (12) to the at least one endpoint signal; and determining (14) an endpoint of the etch process from the at least one filtered endpoint signal.</p> |
申请公布号 |
WO2004042803(A1) |
申请公布日期 |
2004.05.21 |
申请号 |
WO2003US31529 |
申请日期 |
2003.10.31 |
申请人 |
TOKYO ELECTRON LIMITED;YUE, HONGYU |
发明人 |
YUE, HONGYU |
分类号 |
H01L21/00;(IPC1-7):H01L21/00;G01L21/30 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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