| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving characteristics in a transistor with a strain silicon layer as a channel region by forming the high-quality strain silicon layer, where a crystalline defect is reduced on a silicon germanium layer, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device comprises a porous silicon layer 2 formed on the surface of a silicon substrate 1, a first single crystal silicon layer 3 formed on the surface of the porous silicon layer 2, a first silicon germanium layer 5a that is laminated to the first single crystal silicon layer 3 and is set to be in a strain relief state, and a single crystal silicon layer 6a for channels that is laminated to the first silicon germanium layer 5a and is set to be in a strain state becoming a channel region (6ac). COPYRIGHT: (C)2004,JPO
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