发明名称 |
Ferroelectric memory device and method of forming the same |
摘要 |
A ferroelectric memory device along with a method of forming the same are provided. A first interlayer insulating layer is formed on a semiconductor substrate. A buried contact structure is formed on the first interlayer insulating layer. The buried contact structure is electrically connected to the substrate through a first contact hole extending through the first interlayer insulating layer. A blocking layer covers or encapsulates the buried contact structure and the first interlayer insulating layer. A second interlayer insulating layer is formed on the blocking layer. A ferroelectric capacitor formed on the second interlayer insulating layer and is electrically connected to the buried contact structure through a second contact hole that penetrates the second interlayer insulating layer and the blocking layer.
|
申请公布号 |
US6737694(B2) |
申请公布日期 |
2004.05.18 |
申请号 |
US20020066172 |
申请日期 |
2002.01.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-NAM;SONG YOON-JONG |
分类号 |
H01L27/105;H01L21/02;H01L21/314;H01L21/318;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|