| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin film transistor which can remove fixed charge from an insulating film such as a substrate protecting film and a gate insulating film. SOLUTION: This manufacturing method of a thin film transistor includes a substrate protecting film formation process ST11, a semiconductor film formation process ST12, and a gate insulating film formation process ST13. The substrate protecting film formation process and the gate insulating film formation process, which use methods such as a plasma CVD method or a sputtering method, are followed by a fixed charge removal process ST21 or ST22, in which the formed insulating film is immersed in an acid solution such as sulfuric acid solution or a carbonic acid solution, a neutral solution, or an alkaline solution such as ammonia solution, then the substrate is immersed in pure water to remove an electrolyte from it. After each fixed charge removal process ST21 ST22, a heat treatment process ST31 or ST32 is performed, in which the treated insulating film is heated in an atmosphere including oxidized gas such as oxygen gas or water vapor. COPYRIGHT: (C)2004,JPO
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