| 摘要 |
PROBLEM TO BE SOLVED: To obtain a titanium oxide film having satisfactory crystallinity at a low temperature in a short time. SOLUTION: In the method of producing a titanium oxide film, an inert gas is introduced into a vacuum vessel, high voltage is applied to the space between a base material and a titanium target, and sputtering is performed to produce a titanium film on the base material, and next, gas comprising oxygen atoms is introduced, the polarity of the high voltage is changed, and high voltage is again applied to oxidize the titanium film. Alternatively, an oxidizing gas may be introduced into the oxidizing stage of the titanium film. As the gas comprising the oxygen atoms and the oxidizing gas, gaseous ozone may be used. It is also possible that the film thickness of the titanium film is controlled to≤20 nm, and the stage of producing the titanium film and the stage of oxidizing the titanium film can alternately be repeated. COPYRIGHT: (C)2004,JPO
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