发明名称 |
DEPLETION LAYER CAPACITANCE CALCULATION APPARATUS AND C-V CHARACTERISTIC MEASURING APPARATUS OF SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a depletion layer capacitance calculation apparatus and a C-V characteristic measuring apparatus of a semiconductor which accurately calculate capacitance of a depletion layer in the semiconductor for actually extending in all directions from an applying electrode in a width corresponding to an applied voltage on the assumption that the depletion layer extends in the depth direction only. SOLUTION: The depletion layer capacitance calculation apparatus 5 and the C-V characteristic measuring apparatus 1 accurately calculate the capacitance of the depletion layer in the semiconductor 7 for actually extending in all directions from the applying electrode 8 in the width corresponding to the applied voltage on the assumption that the depletion layer extends in the depth direction only. A depletion layer capacitance calculation means is provided and calculates true depletion layer capacitance on the assumption that the depletion layer extends in a depth actually equal. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004138492(A) |
申请公布日期 |
2004.05.13 |
申请号 |
JP20020303177 |
申请日期 |
2002.10.17 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
OSHIDA TAKESHI;EBARA KOJI |
分类号 |
G01N27/00;G01N27/22;H01L21/66;(IPC1-7):G01N27/00 |
主分类号 |
G01N27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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