| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the deterioration of reliability due to stress is prevented by sufficiently relaxing stresses caused at an external connection terminal and an interface between the external connection terminal and wiring, and to provide a method for manufacturing it, in a semiconductor device having a wafer level CSP structure. <P>SOLUTION: The semiconductor device comprises: a semiconductor chip in which an electric circuit is formed on the surface thereof; an electrode pad 102 which is formed on a surface and electrically connected to the electric circuit; an interconnect line 106 electrically connected to the electrode pad; an insulating seal 107 which is formed on a surface and coats the electric circuit and the wiring while exposing a part of the wiring; an external connection terminal 109 electrically connected to the wiring; and a plurality of recesses 105 which are interspatially arranged in the almost same direction in which the semiconductor chip expands and contracts by thermal stress. <P>COPYRIGHT: (C)2004,JPO |
