发明名称 |
Method of manufacturing a non-volatile memory transistor with an access gate on one side of a control gate/floating-gate stack using a spacer |
摘要 |
Consistent with an example embodiment, there is a method for manufacturing a semiconductor device. The semiconductor device comprises a semiconductor body provided at a surface with a non-volatile memory including a memory cell with a gate structure with an access gate and a gate structure with a control gate and a charge storage region situated between the control gate and the semiconductor body. In the method, on the surface of the semiconductor body a first one of said gate structures is formed with side walls extending substantially perpendicular to the surface, a conductive layer is deposited on and next to said first gate-structure, the conductive layer is subjected to a planarizing treatment until the first gate structure is exposed and the so planarized conductive layer is patterned so as to form at least a part of the other gate structure adjoining only a first one of the side walls of the first gate structure. |
申请公布号 |
EP1417704(A2) |
申请公布日期 |
2004.05.12 |
申请号 |
EP20020735732 |
申请日期 |
2002.06.04 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
VAN SCHAIJK, ROBERTUS, T., F. |
分类号 |
H01L21/28;H01L21/336;H01L21/8246;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|