Semiconductor laser device

摘要

A semiconductor laser device includes an active layer and a layer greater in bandgap energy than the active layer and having a stacked-layer structure mainly of gallium-nitride-based semiconductor for lasing. This device includes a gallium-nitride-based semiconductor layer substantially equal in bandgap to the active layer and containing at least one element selected from the group consisting of As, P and Sb for saturable absorption at a location apart from the active layer and inside the layer greater in bandgap energy than the active layer.