| 摘要 |
PURPOSE: A DRAM cell structure and a method for manufacturing the same are provided to be capable of reducing contact resistance of a bit line and increasing the number of chips per unit area. CONSTITUTION: A cell region(11) is diagonally formed against a bit line(14). Two FG lines(12) are overlapped to the cell region. A bit line contact(13) is formed at the overlapped region between the cell region and the bit line. A capacitor contact(15) is formed at oval edge portions of the cell region being not contact with adjacent FG line.
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